IXTH21N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.26 mm

Height :

21.46 mm

Power Dissipation :

300W

Pbfree Code :

yes

Packaging :

Tube

Manufacturer :

IXYS

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.25 Ω

Power Dissipation Ambient-Max :

300 W

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Product Status :

Not For New Designs

Turn-Off Delay Time :

65 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

RECTANGULAR

Number of Terminations :

3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

84A

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Supplier Device Package :

TO-247 (IXTH)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Resistance :

250mOhm

Rds On (Max) @ Id, Vgs :

250m Ω @ 10.5A, 10V

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Power Dissipation (Max) :

300W (Tc)

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

21 A

Package / Case :

TO-247-3

Number of Pins :

3

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500 V

Base Product Number :

IXTH21

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Surface Mount :

No

Power Dissipation-Max :

300W Tc

Rise Time :

33ns

Configuration :

Single

FET Feature :

--

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

21A

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Published :

2000

Drain to Source Voltage (Vdss) :

500V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Lead Free :

Lead Free

Product Type :

MOSFET

Series :

MegaMOS™

Power Dissipation-Max (Abs) :

250 W

Factory Lead Time :

8 Weeks

Package :

Tube

Transistor Type :

1 N-Channel

Width :

5.3 mm

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

30 ns

Pin Count :

3

FET Type :

N-Channel