IXTH20P50P

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Mfr.Part #
IXTH20P50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 20A TO247
Stock
5,250
In Stock :
5,250

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Qualification Status :
Not Qualified
Reach Compliance Code :
Unknown
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Package :
Tube
Number of Terminals :
3
Pbfree Code :
yes
Element Configuration :
Single
Series :
PolarP™
Transistor Type :
1 P-Channel
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Power Dissipation :
460W
Minimum Operating Temperature :
- 55 C
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Avalanche Energy Rating (Eas) :
2500 mJ
Channel Mode :
Enhancement
Published :
2009
Polarity/Channel Type :
P-Channel
Rds On (Max) @ Id, Vgs :
450m Ω @ 10A, 10V
Power Dissipation-Max :
460W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
460 W
Transistor Application :
SWITCHING
Factory Lead Time :
28 Weeks
Power Dissipation (Max) :
460W (Tc)
Product Type :
MOSFET
Product Status :
Active
Package / Case :
TO-247-3
Supplier Device Package :
TO-247 (IXTH)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Surface Mount :
No
Transistor Polarity :
P-Channel
Base Product Number :
IXTH20
Continuous Drain Current (ID) :
20A
Pulsed Drain Current-Max (IDM) :
60A
RoHS :
Details
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
20 A
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
-500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DS Breakdown Voltage-Min :
500 V
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
500V
Rise Time :
32 ns
Number of Terminations :
3
Transistor Element Material :
SILICON
Product Category :
MOSFET
JEDEC-95 Code :
TO-247
FET Feature :
--
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
80 ns
Number of Elements :
1
Packaging :
Tube
FET Type :
P-Channel
Drain-source On Resistance-Max :
0.45Ohm
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTH20P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20P50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXTH20P50P pinout, IXTH20P50P datasheet PDF, IXTH20P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20P50P


P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-247-3

IXTH20P50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH20P50P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)


IXTH20P50P Applications


There are a lot of IXYS
IXTH20P50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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