IXTH20P50P
- Mfr.Part #
- IXTH20P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 20A TO247
- Stock
- 5,250
- In Stock :
- 5,250
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Package :
- Tube
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Series :
- PolarP™
- Transistor Type :
- 1 P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 103nC @ 10V
- Power Dissipation :
- 460W
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Channel Mode :
- Enhancement
- Published :
- 2009
- Polarity/Channel Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 10A, 10V
- Power Dissipation-Max :
- 460W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 460 W
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 28 Weeks
- Power Dissipation (Max) :
- 460W (Tc)
- Product Type :
- MOSFET
- Product Status :
- Active
- Package / Case :
- TO-247-3
- Supplier Device Package :
- TO-247 (IXTH)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Transistor Polarity :
- P-Channel
- Base Product Number :
- IXTH20
- Continuous Drain Current (ID) :
- 20A
- Pulsed Drain Current-Max (IDM) :
- 60A
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 20 A
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- -500V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 500 V
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 32 ns
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-247
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 80 ns
- Number of Elements :
- 1
- Packaging :
- Tube
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.45Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5120pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXTH20P50P
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P-Channel Tube 450m Ω @ 10A, 10V ±20V 5120pF @ 25V 103nC @ 10V 500V TO-247-3
IXTH20P50P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of -500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -500V.20 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH20P50P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTH20P50P Applications
There are a lot of IXYS
IXTH20P50P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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