IXTH20N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain to Source Breakdown Voltage :

600V

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

20A

Package Shape :

RECTANGULAR

Rise Time :

43ns

Base Product Number :

IXTH20

Manufacturer :

IXYS

Mount :

Through Hole

Vgs (Max) :

±20V

Surface Mount :

No

Drain-source On Resistance-Max :

0.35 Ω

Package Type :

TO-247AD

Supplier Device Package :

TO-247 (IXTH)

Power Dissipation (Max) :

300W (Tc)

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Fall Time (Typ) :

40 ns

Polarity :

N

Product Type :

MOSFET

Current Rating :

20A

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Continuous Drain Current :

20(A)

Type :

Power MOSFET

Power Dissipation-Max :

300W Tc

Drain-Source On-Volt :

600(V)

Drain Current-Max (Abs) (ID) :

20 A

Height :

21.46 mm

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

MegaMOS™

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Width :

5.3 mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Channels :

1 Channel

Length :

16.26 mm

Operating Temperature Classification :

Military

Pbfree Code :

yes

Product Status :

Active

Package :

Tube

Resistance :

350mOhm

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

Mounting :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

600 V

Reach Compliance Code :

Compliant

Operating Temp Range :

-55C to 150C

Power Dissipation :

300W

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Power Dissipation Ambient-Max :

300 W

Turn-Off Delay Time :

70 ns

RoHS :

Details

Package / Case :

TO-247-3

Number of Pins :

3

Power Dissipation-Max (Abs) :

300 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Voltage - Rated DC :

600V

Number of Terminals :

3

FET Feature :

--

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Published :

2000

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

FET Type :

N-Channel

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

350m Ω @ 10A, 10V

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

80A

Channel Mode :

Enhancement

Gate-Source Voltage (Max) :

±20(V)

Case Connection :

Isolated

Configuration :

Single

Pin Count :

3

Rad Hardened :

No

Minimum Operating Temperature :

- 55 C