IXTH200N10T
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- Mfr.Part #
- IXTH200N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO247
- Stock
- 97
- In Stock ：
- 97
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 100V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 550W Tc
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Factory Lead Time :
- 28 Weeks
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Maximum Operating Temperature :
- + 175 C
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 550W (Tc)
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Qualification Status :
- Not Qualified
- Length :
- 16.26 mm
- FET Type :
- N-Channel
- Base Product Number :
- IXTH200
- Continuous Drain Current (ID) :
- 200A
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 31ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Tradename :
- HiPerFET
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Published :
- 2008
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Supplier Device Package :
- TO-247 (IXTH)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 5.5mOhm
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- Height :
- 21.46 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Fall Time (Typ) :
- 34 ns
- Mounting Type :
- Through Hole
- Package :
- Tube
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Power Dissipation :
- 550W
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 500A
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Width :
- 5.3 mm
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Series :
- TrenchMV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 45 ns
- Datasheets
- IXTH200N10T
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N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V 100V TO-247-3
IXTH200N10T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 500A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH200N10T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTH200N10T Applications
There are a lot of IXYS
IXTH200N10T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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