IXTH1N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

18 ns

Series :

--

Width :

5.3 mm

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

1.5 A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

1000 V

Published :

2002

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

1kV

Base Product Number :

IXTH1

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Product Status :

Active

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Product Type :

MOSFET

Power Dissipation :

60W

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Power Dissipation-Max :

60W Tc

Factory Lead Time :

53 Weeks

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Length :

16.26 mm

Rds On (Max) @ Id, Vgs :

11 Ω @ 1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Height :

21.46 mm

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Configuration :

Single

Power Dissipation (Max) :

60W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

1000V

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Mount :

Through Hole

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

11 Ω

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

60 W

Turn-Off Delay Time :

20 ns

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Continuous Drain Current (ID) :

1.5A

Reach Compliance Code :

Compliant

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AD

Avalanche Energy Rating (Eas) :

200 mJ

Product Category :

MOSFET

RoHS :

Details

Manufacturer :

IXYS

Supplier Device Package :

TO-247 (IXTH)

Rise Time :

19ns

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

6A