IXTH13N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Series :

MegaMOS™

Transistor Type :

1 N-Channel

Terminal Position :

Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

13 A

JEDEC-95 Code :

TO-247AD

Pulsed Drain Current-Max (IDM) :

52A

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Pbfree Code :

yes

Power Dissipation Ambient-Max :

300 W

Mounting Type :

Through Hole

Power Dissipation-Max :

300W Tc

Height :

21.46 mm

Power Dissipation :

300W

Product Category :

MOSFET

Number of Terminations :

3

Reach Compliance Code :

Compliant

Length :

16.26 mm

Package / Case :

TO-247-3

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max (Abs) :

300 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Package :

Tube

Supplier Device Package :

TO-247 (IXTH)

DS Breakdown Voltage-Min :

800 V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.3 mm

Configuration :

Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mount :

Through Hole

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Mounting Style :

Through Hole

Rise Time :

33ns

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXTH13

RoHS :

Details

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

13A

Channel Mode :

Enhancement

Element Configuration :

Single

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

63 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

300W (Tc)

Drain-source On Resistance-Max :

0.8Ohm

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

800m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

13A Tc

FET Type :

N-Channel

Brand :

IXYS

Qualification Status :

Not Qualified

Manufacturer :

IXYS

Fall Time (Typ) :

32 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1996