IRLHS6342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

13 ns

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Length :

2.1mm

Turn On Delay Time :

4.9 ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

19 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta 19A Tc

Height :

950μm

Nominal Vgs :

1.1 V

Power Dissipation :

2.1W

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

8.7A

Rise Time :

13ns

RoHS Status :

ROHS3 Compliant

Package / Case :

6-PowerVDFN

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.1V @ 10μA

JESD-609 Code :

e3

Radiation Hardening :

No

Terminal Position :

Dual

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

1019pF @ 25V

Width :

2.1mm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mount :

Surface Mount

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 8.5A, 4.5V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)