IRLHS2242TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

31mOhm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Continuous Drain Current (ID) :

7.2A

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

877pF @ 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-20V

Pulsed Drain Current-Max (IDM) :

34A

Turn-Off Delay Time :

54 ns

Rds On (Max) @ Id, Vgs :

31m Ω @ 8.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.1V @ 10μA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

9.6W

Series :

HEXFET®

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta 15A Tc

Threshold Voltage :

-800mV

Lead Free :

Lead Free

Package / Case :

6-PowerVDFN

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Fall Time (Typ) :

66 ns

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

54ns

Nominal Vgs :

-800 mV

Turn On Delay Time :

7.9 ns

Power Dissipation-Max :

2.1W Ta 9.6W Tc

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Published :

2004

Mount :

Surface Mount

FET Type :

P-Channel