IRLHS2242TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Height :

950μm

Rds On Max :

31 mΩ

Supplier Device Package :

6-PQFN (2x2)

Max Operating Temperature :

150°C

Width :

2.1mm

Threshold Voltage :

-800mV

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

31mOhm @ 8.5A, 4.5V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

66 ns

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Power Dissipation :

2.1W

Input Capacitance (Ciss) (Max) @ Vds :

877pF @ 10V

Continuous Drain Current (ID) :

7.2A

Published :

2011

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Recovery Time :

41 ns

Packaging :

Cut Tape (CT)

Max Power Dissipation :

2.1W

Mounting Type :

Surface Mount

Radiation Hardening :

No

Nominal Vgs :

-800 mV

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Length :

2.1mm

Rise Time :

54ns

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta 15A Tc

Package / Case :

6-PowerVDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

31mOhm

FET Type :

P-Channel

Input Capacitance :

870pF

Series :

HEXFET®

Turn On Delay Time :

7.9 ns

Mount :

Surface Mount

Turn-Off Delay Time :

54 ns