IRGBC30F
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- Mfr.Part #
- IRGBC30F
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT FAST 600V 31A TO-220AB
- Stock
- 29,105
- In Stock ：
- 29,105
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Transistor Application :
- Motor Control
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Voltage-Max :
- 20V
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 31A
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Power - Max :
- 100W
- Input Type :
- Standard
- Additional Feature :
- Fast
- Power Dissipation-Max (Abs) :
- 100W
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 17A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Published :
- 1996
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Datasheets
- IRGBC30F
IRGBC30F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGBC30F IGBT Description
This Insulated Gate Bipolar Transistors (IGBT) IRGBC30F from Infineon have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. It provides substantial benefits to a host of high-voltage, high-current applications. It has low switching losses and low EMI.
IRGBC30F IGBT Features
Optimized for medium operating frequency ( 1 to 10kHz)
Collector-Emitter Breakdown Voltage: 600 V
Gate-Emitter Voltage: ±20 V
Low switching losses
Continuous Collector Current: 31 A (@ 25℃)
IRGBC30F IGBT Applications
Solar Inverter
General Motor Driver
PFC
Oil Pump
PTC Heater
Welder
HVAC Systems
Switching Device
UPS
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