IRGB4715DPBF

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Mfr.Part #
IRGB4715DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 650V TO-220AB
Stock
46,499
In Stock :
46,499

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Factory Lead Time :
19 Weeks
Collector Emitter Voltage (VCEO) :
2V
Td (on/off) @ 25°C :
30ns/100ns
RoHS Status :
RoHS Compliant
Power - Max :
100W
Switching Energy :
200μJ (on), 90μJ (off)
Input Type :
Standard
Published :
2014
Mount :
Through Hole
Gate Charge :
30nC
Width :
4.83mm
Operating Temperature :
-40°C~175°C TJ
Collector Emitter Breakdown Voltage :
650V
Packaging :
Tube
Reverse Recovery Time :
86 ns
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Max Power Dissipation :
100W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Length :
10.67mm
REACH SVHC :
No SVHC
Test Condition :
400V, 8A, 50 Ω, 15V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
16.51mm
Current - Collector Pulsed (Icm) :
24A
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
1.7V
Max Collector Current :
21A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 8A
Element Configuration :
Single
Datasheets
IRGB4715DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGB4715DPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, IRGB4715DPBF pinout, IRGB4715DPBF datasheet PDF, IRGB4715DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGB4715DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGB4715DPBF


IRGB4715DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGB4715DPBF Description


IRGB4715DPBF is a 650V Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Infineon  IRGB4715DPBF can be applied in Industrial Motor drives, UPS, Solar Inverters, and Welding applications due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGB4715DPBF is in the TO‐220AB package with 100W power dissipation.



IRGB4715DPBF Features


Low VcE(ON) and Switching Losses

5.5μs Short Circuit SOA

Square RBSOA.

Maximum Junction Temperature 175°C

Positive VcE (ON) Temperature Coefficient

Lead-Free, RoHS compliant



IRGB4715DPBF Applications


Industrial Motor Drive

UPS

Solar Inverters

Welding


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