IRGB4607DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 4A

Turn On Time :

51 ns

Max Collector Current :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Width :

4.83mm

Max Power Dissipation :

58W

Mounting Type :

Through Hole

Input Type :

Standard

Power - Max :

58W

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

2.05V

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

600V

Number of Elements :

1

Collector Emitter Saturation Voltage :

1.75V

Packaging :

Tube

Published :

2013

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Length :

10.67mm

Number of Pins :

3

Weight :

2.299997g

Switching Energy :

140μJ (on), 62μJ (off)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Test Condition :

400V, 4A, 100 Ω, 15V

Gate Charge :

9nC

Mount :

Through Hole

Height :

16.51mm

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Operating Temperature :

-40°C~175°C TJ

Package / Case :

TO-220-3

Transistor Application :

POWER CONTROL

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

12A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

48 ns

Td (on/off) @ 25°C :

27ns/120ns

Turn Off Time-Nom (toff) :

95 ns