IRGB4059DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Published :

2001

Mount :

Through Hole

Width :

4.82mm

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Package / Case :

TO-220-3

Test Condition :

400V, 4A, 100 Ω, 15V

Reverse Recovery Time :

55 ns

Gate-Emitter Voltage-Max :

20V

Rise Time :

10ns

Current - Collector Pulsed (Icm) :

16A

Mounting Type :

Through Hole

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

Length :

10.66mm

Collector Emitter Saturation Voltage :

1.75V

Turn-Off Delay Time :

65 ns

Power Dissipation :

56W

Termination :

Through Hole

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Max Power Dissipation :

56W

Transistor Element Material :

SILICON

Height :

9.02mm

Turn Off Time-Nom (toff) :

120 ns

Number of Elements :

1

Input Type :

Standard

Packaging :

Tube

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Switching Energy :

35μJ (on), 75μJ (off)

REACH SVHC :

No SVHC

IGBT Type :

Trench

Gate-Emitter Thr Voltage-Max :

6.5V

Gate Charge :

9nC

Fall Time-Max (tf) :

20ns

Turn On Time :

35 ns

Number of Pins :

3

Collector Emitter Breakdown Voltage :

2.2V

Element Configuration :

Single

Td (on/off) @ 25°C :

25ns/65ns

Turn On Delay Time :

25 ns

Collector Emitter Voltage (VCEO) :

2.05V

Additional Feature :

ULTRA FAST SOFT RECOVERY

Max Collector Current :

8A

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 4A

Voltage - Collector Emitter Breakdown (Max) :

600V

JEDEC-95 Code :

TO-220AB