IRG4PSH71KDPBF
- Mfr.Part #
- IRG4PSH71KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- IRG4PSH71 - DISCRETE IGBT WITH A
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 7 Weeks
- Additional Feature :
- LOW CONDUCTION LOSS
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Current Rating :
- 78A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Transistor Application :
- Motor Control
- Collector Emitter Saturation Voltage :
- 2.97V
- Turn On Time :
- 152 ns
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Fall Time-Max (tf) :
- 190ns
- Number of Terminations :
- 3
- Gate-Emitter Voltage-Max :
- 20V
- ECCN Code :
- EAR99
- Reverse Recovery Time :
- 107 ns
- Max Power Dissipation :
- 350W
- Max Collector Current :
- 78A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Width :
- 5.3mm
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 1.2kV
- Number of Pins :
- 3
- Rise Time :
- 84ns
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 410nC
- Radiation Hardening :
- No
- Test Condition :
- 800V, 42A, 5 Ω, 15V
- Length :
- 16.0782mm
- Peak Reflow Temperature (Cel) :
- 250
- Package / Case :
- TO-274AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 20.8mm
- Power Dissipation :
- 350W
- Element Configuration :
- Single
- Packaging :
- Bulk
- Termination :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 156A
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 5.68mJ (on), 3.23mJ (off)
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Td (on/off) @ 25°C :
- 67ns/230ns
- Collector Emitter Voltage (VCEO) :
- 3.9V
- Turn Off Time-Nom (toff) :
- 660 ns
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 42A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1999
- Datasheets
- IRG4PSH71KDPBF

IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSH71KDPBF Description
The IRG4PSH71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSH71KDPBF Features
-
Maximum power density
-
High abort circuit rating IGBTs
-
Tightest parameter distribution
-
High current rating co-pack IGBT
-
Hole-less clip/pressure mount package
-
Creepage distance increased to 5.35mm
-
Minimum switching losses combined with low conduction losses
-
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSH71KDPBF Applications
-
Alternative Energy
-
Power Management
-
Motor Drive & Control
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