IRG4PSH71KDPBF
- Mfr.Part #
- IRG4PSH71KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- IRG4PSH71 - DISCRETE IGBT WITH A
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Fall Time-Max (tf) :
- 190ns
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 2.97V
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 660 ns
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 42A
- Case Connection :
- COLLECTOR
- Switching Energy :
- 5.68mJ (on), 3.23mJ (off)
- Max Collector Current :
- 78A
- Number of Terminations :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Mount :
- Through Hole
- Test Condition :
- 800V, 42A, 5 Ω, 15V
- Power Dissipation :
- 350W
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 16.0782mm
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate Charge :
- 410nC
- Published :
- 1999
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-274AA
- Td (on/off) @ 25°C :
- 67ns/230ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Reverse Recovery Time :
- 107 ns
- Height :
- 20.8mm
- Current Rating :
- 78A
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 156A
- Peak Reflow Temperature (Cel) :
- 250
- Element Configuration :
- Single
- Max Power Dissipation :
- 350W
- Collector Emitter Voltage (VCEO) :
- 3.9V
- Input Type :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Termination :
- Through Hole
- Rise Time :
- 84ns
- Transistor Application :
- Motor Control
- Width :
- 5.3mm
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 1.2kV
- Lead Free :
- Lead Free
- Gate-Emitter Voltage-Max :
- 20V
- Factory Lead Time :
- 7 Weeks
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Turn On Time :
- 152 ns
- Datasheets
- IRG4PSH71KDPBF
IRG4PSH71KDPBF Documents

IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSH71KDPBF Description
The IRG4PSH71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSH71KDPBF Features
-
Maximum power density
-
High abort circuit rating IGBTs
-
Tightest parameter distribution
-
High current rating co-pack IGBT
-
Hole-less clip/pressure mount package
-
Creepage distance increased to 5.35mm
-
Minimum switching losses combined with low conduction losses
-
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSH71KDPBF Applications
-
Alternative Energy
-
Power Management
-
Motor Drive & Control
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