IRG4BC10SDPBF
- Mfr.Part #
- IRG4BC10SDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 14A 38W TO220AB
- Stock
- 19,891
- In Stock :
- 19,891
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 4.69mm
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.7V
- Input Type :
- Standard
- Max Collector Current :
- 14A
- Rise Time :
- 32ns
- Test Condition :
- 480V, 8A, 100Ohm, 15V
- RoHS Status :
- RoHS Compliant
- Td (on/off) @ 25°C :
- 76ns/815ns
- Lead Free :
- Lead Free
- Published :
- 2007
- Current - Collector Pulsed (Icm) :
- 18A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 600V
- Power - Max :
- 38W
- Current - Collector (Ic) (Max) :
- 14A
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 38W
- Current Rating :
- 14A
- Height :
- 8.77mm
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 8A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Switching Energy :
- 310μJ (on), 3.28mJ (off)
- Supplier Device Package :
- TO-220AB
- Max Power Dissipation :
- 38W
- Length :
- 10.54mm
- Reverse Recovery Time :
- 28 ns
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Number of Pins :
- 3
- Gate Charge :
- 15nC
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Datasheets
- IRG4BC10SDPBF
IRG4BC10SDPBF Documents

IRG4BC10SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC10SDPBF Description
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
IRG4BC10SDPBF Features
·Extremely lowvoltage drop1.1Vtyp.@2A
S-Series:Minimizes power dissipation at up to3 KHz PWM frequency in inverter drivesup to4 KHz in brushless DC drives.·Very Tight Vce(on)distribution
·IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recoveryanti-paralle diodes for use in bridge configurations
·lndustry standard TO-220AB package·Lead-Free
.Generation 4 1GBTs offer highest efficiencies available
·GBTs optimized for specific application conditions*HEXFRED diodes optimized for performance with GBTsMinimized recovery characteristios require less/no snubbing
*Lower losses than MOSFET's conduction and Diode losses
IRG4BC10SDPBF Applications
? Induction Heating, Microwave Oven
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