IRG4BC10SD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

2

Voltage - Collector Emitter Breakdown (Max) :

600V

Published :

2000

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW CONDUCTION LOSS

Packaging :

Tube

Number of Elements :

1

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Current - Collector (Ic) (Max) :

14A

Turn On Time :

106 ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Switching Energy :

310μJ (on), 3.28mJ (off)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Test Condition :

480V, 8A, 100 Ω, 15V

JESD-609 Code :

e3

Power - Max :

38W

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

1780 ns

Current - Collector Pulsed (Icm) :

18A

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Input Type :

Standard

Reverse Recovery Time :

28ns

Gate Charge :

15nC

Terminal Form :

Gull wing

ECCN Code :

EAR99

Package / Case :

TO-220-3

Td (on/off) @ 25°C :

76ns/815ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier