IRG4PH50S-EPBF
- Mfr.Part #
- IRG4PH50S-EPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PH50 - DISCRETE IGBT WITH AN
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 32ns/845ns
- Max Collector Current :
- 57A
- Input Type :
- Standard
- Collector Emitter Saturation Voltage :
- 1.7V
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-247AD
- REACH SVHC :
- No SVHC
- Turn On Time :
- 62 ns
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Element Configuration :
- Dual
- Current - Collector Pulsed (Icm) :
- 114A
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 14 Weeks
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Application :
- POWER CONTROL
- Height :
- 20.7mm
- Width :
- 5.3086mm
- Switching Energy :
- 1.8mJ (on), 19.6mJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 33A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Gate Charge :
- 167nC
- Published :
- 2000
- Test Condition :
- 960V, 33A, 5 Ω, 15V
- Max Power Dissipation :
- 200W
- Terminal Position :
- Single
- Power Dissipation :
- 200W
- RoHS Status :
- RoHS Compliant
- Turn Off Time-Nom (toff) :
- 2170 ns
- Number of Pins :
- 3
- Length :
- 15.87mm
- Datasheets
- IRG4PH50S-EPBF
IRG4PH50S-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH50S-EPBF Description
IRG4PH50S-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4PH50S-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4PH50S-EPBF has the common source configuration.
IRG4PH50S-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG4PH50S-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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