IRG4PH40UDPBF
- Mfr.Part #
- IRG4PH40UDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PH40U - 1200V ULTRAFAST 5-40
- Stock
- 12,924
- In Stock :
- 12,924
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 41A
- Lead Free :
- Lead Free
- Width :
- 5.3086mm
- Factory Lead Time :
- 14 Weeks
- Power Dissipation :
- 160W
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 82A
- Reverse Recovery Time :
- 63 ns
- Height :
- 20.7mm
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 150 ns
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 46ns/97ns
- Turn Off Time-Nom (toff) :
- 750 ns
- Termination :
- Through Hole
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 41A
- Packaging :
- Bulk
- Gate-Emitter Thr Voltage-Max :
- 6V
- Collector Emitter Voltage (VCEO) :
- 3.1V
- JEDEC-95 Code :
- TO-247AC
- Collector Emitter Saturation Voltage :
- 2.43V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Turn On Time :
- 74 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 21A
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Turn On Delay Time :
- 46 ns
- Test Condition :
- 800V, 21A, 10 Ω, 15V
- Gate-Emitter Voltage-Max :
- 20V
- Gate Charge :
- 86nC
- Element Configuration :
- Single
- Max Power Dissipation :
- 160W
- Number of Pins :
- 3
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Transistor Application :
- POWER CONTROL
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Rise Time :
- 59ns
- Length :
- 15.87mm
- Published :
- 2004
- Voltage - Rated DC :
- 1.2kV
- Switching Energy :
- 1.8mJ (on), 1.93mJ (off)
- Datasheets
- IRG4PH40UDPBF

IRG4PH40UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40UDPBF Description
The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz co-pack IGBT with a soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes are optimized for performance and used in bridge configurations. The latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. The IRG4PH40UDPBF is offered in the TO-247-3 package. It is specified for operation from –55°C to +150°C.
IRG4PH40UDPBF Features
-
UltraFast Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
-
The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations
-
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Industry-standard TO-247AC package
-
Lead-Free
IRG4PH40UDPBF Applications
-
Solar energy
-
Wind energy
-
Hydro energy
-
Tidal energy
-
Geothermal energy
-
Biomass energy
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