IRG4PH40KPBF
- Mfr.Part #
- IRG4PH40KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 20,955
- In Stock :
- 20,955
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Rise Time :
- 22ns
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Current - Collector Pulsed (Icm) :
- 60A
- Voltage - Rated DC :
- 1.2kV
- Gate-Emitter Thr Voltage-Max :
- 6V
- JEDEC-95 Code :
- TO-247AC
- Max Power Dissipation :
- 160W
- Package / Case :
- TO-247-3
- Published :
- 2004
- Transistor Application :
- Motor Control
- Radiation Hardening :
- No
- Max Collector Current :
- 30A
- Packaging :
- Bulk
- Gate Charge :
- 94nC
- Test Condition :
- 960V, 15A, 10 Ω, 15V
- Collector Emitter Voltage (VCEO) :
- 3.4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Collector Emitter Saturation Voltage :
- 2.74V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Input Type :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 15A
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- LOW CONDUCTION LOSS
- Factory Lead Time :
- 14 Weeks
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Mounting Type :
- Through Hole
- Current Rating :
- 30A
- Turn On Time :
- 53 ns
- Power Dissipation :
- 160W
- Height :
- 20.701mm
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Width :
- 5.3086mm
- Length :
- 15.875mm
- REACH SVHC :
- No SVHC
- Turn Off Time-Nom (toff) :
- 1200 ns
- Switching Energy :
- 730μJ (on), 1.66mJ (off)
- Number of Terminations :
- 3
- Td (on/off) @ 25°C :
- 30ns/200ns
- Datasheets
- IRG4PH40KPBF

IRG4PH40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED? ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT.
IRG4PH40KPBF Features
● Combines low conduction losses with high switching speed
● Tighter parameter distribution and higher efficiency than previous generations
● IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
● Lead-Free
● Latest generation 4 IGBT's offer highest power density motor controls possible
● HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
● For hints see design tip 97003
IRG4PH40KPBF Applications
● New energy vehicle
● Photovoltaic & wind power generation
● The smart grid
● Motor Control
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