IRG4PH40KDPBF
- Mfr.Part #
- IRG4PH40KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 4,220
- In Stock :
- 4,220
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 15A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Gate Charge :
- 94nC
- Mount :
- Through Hole
- Test Condition :
- 800V, 15A, 10 Ω, 15V
- Reverse Recovery Time :
- 63 ns
- Current Rating :
- 30A
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 1.2kV
- Element Configuration :
- Single
- Width :
- 5.3mm
- Turn On Delay Time :
- 50 ns
- JESD-609 Code :
- e3
- Input Type :
- Standard
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 3.4V
- Turn-Off Delay Time :
- 96 ns
- Max Collector Current :
- 30A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- JEDEC-95 Code :
- TO-247AC
- Height :
- 20.3mm
- Current - Collector Pulsed (Icm) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Td (on/off) @ 25°C :
- 50ns/96ns
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Turn Off Time-Nom (toff) :
- 730 ns
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 250
- Rise Time :
- 31ns
- Collector Emitter Saturation Voltage :
- 3.4V
- Factory Lead Time :
- 14 Weeks
- Gate-Emitter Thr Voltage-Max :
- 3V
- Turn On Time :
- 82 ns
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Package / Case :
- TO-247-3
- Gate-Emitter Voltage-Max :
- 20V
- Length :
- 15.875mm
- Switching Energy :
- 1.31mJ (on), 1.12mJ (off)
- Max Power Dissipation :
- 160W
- Published :
- 2000
- Transistor Application :
- Motor Control
- Power Dissipation :
- 160W
- Datasheets
- IRG4PH40KDPBF

IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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