IRG4PH40KDPBF
- Mfr.Part #
- IRG4PH40KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 4,220
- In Stock :
- 4,220
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Peak Reflow Temperature (Cel) :
- 250
- JESD-609 Code :
- e3
- Switching Energy :
- 1.31mJ (on), 1.12mJ (off)
- Collector Emitter Voltage (VCEO) :
- 3.4V
- Current Rating :
- 30A
- Mount :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation :
- 160W
- Transistor Element Material :
- SILICON
- Length :
- 15.875mm
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Published :
- 2000
- Input Type :
- Standard
- Rise Time :
- 31ns
- Gate-Emitter Voltage-Max :
- 20V
- Turn On Delay Time :
- 50 ns
- Packaging :
- Tube
- Max Collector Current :
- 30A
- JEDEC-95 Code :
- TO-247AC
- Max Power Dissipation :
- 160W
- Gate Charge :
- 94nC
- Case Connection :
- COLLECTOR
- Transistor Application :
- Motor Control
- Width :
- 5.3mm
- Turn-Off Delay Time :
- 96 ns
- Collector Emitter Saturation Voltage :
- 3.4V
- Height :
- 20.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Current - Collector Pulsed (Icm) :
- 60A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 15A
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Turn Off Time-Nom (toff) :
- 730 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Gate-Emitter Thr Voltage-Max :
- 3V
- Mounting Type :
- Through Hole
- Test Condition :
- 800V, 15A, 10 Ω, 15V
- Turn On Time :
- 82 ns
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 50ns/96ns
- Additional Feature :
- LOW CONDUCTION LOSS
- Reverse Recovery Time :
- 63 ns
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 1.2kV
- Datasheets
- IRG4PH40KDPBF

IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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