IRG4PC30FDPBF

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Mfr.Part #
IRG4PC30FDPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IRG4PC30F - 600V FAST 1-8 KHZ DI
Stock
1,904
In Stock :
1,904

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Power Dissipation :
100W
Gate-Emitter Thr Voltage-Max :
6V
Radiation Hardening :
No
Gate-Emitter Voltage-Max :
20V
Voltage - Rated DC :
600V
Packaging :
Bulk
Test Condition :
480V, 17A, 23 Ω, 15V
Width :
5.3mm
Additional Feature :
FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Weight :
38.000013g
Rise Time :
26ns
Turn On Time :
69 ns
Collector Emitter Saturation Voltage :
1.99V
Element Configuration :
Single
Current Rating :
31A
Length :
15.875mm
RoHS Status :
ROHS3 Compliant
Max Collector Current :
31A
REACH SVHC :
No SVHC
Input Type :
Standard
Published :
2000
ECCN Code :
EAR99
JEDEC-95 Code :
TO-247AC
Turn On Delay Time :
42 ns
Max Junction Temperature (Tj) :
150°C
Td (on/off) @ 25°C :
42ns/230ns
Max Power Dissipation :
100W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Pulsed (Icm) :
120A
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Transistor Application :
POWER CONTROL
Transistor Element Material :
SILICON
Turn-Off Delay Time :
230 ns
Gate Charge :
51nC
Height :
24.99mm
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Switching Energy :
630μJ (on), 1.39mJ (off)
Continuous Collector Current :
31A
Reverse Recovery Time :
42 ns
Turn Off Time-Nom (toff) :
620 ns
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Package / Case :
TO-247-3
Collector Emitter Voltage (VCEO) :
600V
Lead Free :
Contains Lead, Lead Free
Mount :
Through Hole
Factory Lead Time :
14 Weeks
Case Connection :
COLLECTOR
Number of Elements :
1
Datasheets
IRG4PC30FDPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4PC30FDPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IRG4PC30FDPBF pinout, IRG4PC30FDPBF datasheet PDF, IRG4PC30FDPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4PC30FDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4PC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

irg4pc30fdpbf Description

The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

irg4pc30fdpbf Features

? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free

irg4pc30fdpbf Applications

variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.
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