IRG4IBC30WPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-220AB

Power Dissipation :

45W

Collector Emitter Voltage (VCEO) :

2.7V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

99 ns

Polarity/Channel Type :

N-Channel

Case Connection :

Isolated

Voltage - Rated DC :

600V

Width :

4.826mm

Fall Time-Max (tf) :

100ns

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Number of Pins :

3

Lead Free :

Lead Free

Turn On Time :

41 ns

Max Power Dissipation :

45W

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

300 ns

Number of Terminations :

3

Length :

10.6172mm

Mounting Type :

Through Hole

Switching Energy :

130µJ (on), 130µJ (off)

Terminal Position :

Single

Gate Charge :

51nC

Collector Emitter Saturation Voltage :

2.1V

Packaging :

Tube

Transistor Application :

POWER CONTROL

Input Type :

Standard

Mount :

Through Hole

Current - Collector Pulsed (Icm) :

92A

ECCN Code :

EAR99

Turn On Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Test Condition :

480V, 12A, 23 Ω, 15V

Element Configuration :

Dual

Gate-Emitter Thr Voltage-Max :

6V

Rise Time :

16ns

Factory Lead Time :

16 Weeks

Height :

14.224mm

Package / Case :

TO-220-3 Full Pack

Current Rating :

17A

Additional Feature :

LOW CONDUCTION LOSS

Td (on/off) @ 25°C :

25ns/99ns

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Number of Elements :

1

Max Collector Current :

17A

Collector Emitter Breakdown Voltage :

600V