IRG4BC30WPBF
- Mfr.Part #
- IRG4BC30WPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- 600V WARP 60-150 KHZ DISCRETE IG
- Stock
- 6,310
- In Stock :
- 6,310
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 6V
- Radiation Hardening :
- No
- Gate-Emitter Voltage-Max :
- 20V
- Power Dissipation :
- 100W
- Case Connection :
- COLLECTOR
- Additional Feature :
- LOW CONDUCTION LOSS
- Number of Elements :
- 1
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead, Lead Free
- Height :
- 8.77mm
- Fall Time-Max (tf) :
- 100ns
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 92A
- Max Power Dissipation :
- 100W
- Max Collector Current :
- 23A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 300 ns
- Length :
- 10.54mm
- Gate Charge :
- 51nC
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Switching Energy :
- 130µJ (on), 130µJ (off)
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 2.7V
- REACH SVHC :
- No SVHC
- Current Rating :
- 23A
- Packaging :
- Tube
- Termination :
- Through Hole
- Published :
- 2003
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- Element Configuration :
- Dual
- Mounting Type :
- Through Hole
- Width :
- 4.69mm
- Turn On Delay Time :
- 25 ns
- Weight :
- 6.000006g
- Voltage - Rated DC :
- 600V
- Transistor Element Material :
- SILICON
- Transistor Application :
- POWER CONTROL
- Collector Emitter Saturation Voltage :
- 2.7V
- Turn-Off Delay Time :
- 99 ns
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 41 ns
- Td (on/off) @ 25°C :
- 25ns/99ns
- Terminal Position :
- Single
- Rise Time :
- 17ns
- Datasheets
- IRG4BC30WPBF
IRG4BC30WPBF Documents

IRG4BC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30WPBF Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
IRG4BC30WPBF Features
? Short Circuit Rated Time; 10us @ TC =100 ° C, VGE = 15V
? High Speed Switching
? Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A
? High Input Impedance
? Fast & Soft Anti-Parallel FWD
? UL Certified No.E209204Application
? AC & DC Motor Controls
? General Purpose Inverters
? Weldings
? Servo Controls
? UPS
IRG4BC30WPBF Applications
Air Conditioning
Motor Drives
Servo Drives
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