IRG4BC30WPBF

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Mfr.Part #
IRG4BC30WPBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
600V WARP 60-150 KHZ DISCRETE IG
Stock
6,310
In Stock :
6,310

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Packaging :
Tube
Transistor Element Material :
SILICON
Element Configuration :
Dual
Current Rating :
23A
Max Collector Current :
23A
Power Dissipation :
100W
Turn On Time :
41 ns
Mount :
Through Hole
Case Connection :
COLLECTOR
Weight :
6.000006g
Collector Emitter Saturation Voltage :
2.7V
Number of Pins :
3
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Radiation Hardening :
No
Terminal Position :
Single
Additional Feature :
LOW CONDUCTION LOSS
RoHS Status :
ROHS3 Compliant
Td (on/off) @ 25°C :
25ns/99ns
ECCN Code :
EAR99
Transistor Application :
POWER CONTROL
Turn-Off Delay Time :
99 ns
Width :
4.69mm
Current - Collector Pulsed (Icm) :
92A
Gate Charge :
51nC
Collector Emitter Voltage (VCEO) :
2.7V
Published :
2003
Turn Off Time-Nom (toff) :
300 ns
Termination :
Through Hole
Voltage - Rated DC :
600V
Length :
10.54mm
Height :
8.77mm
Rise Time :
17ns
Number of Elements :
1
Number of Terminations :
3
Factory Lead Time :
16 Weeks
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Lead Free :
Contains Lead, Lead Free
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Type :
Standard
Max Power Dissipation :
100W
REACH SVHC :
No SVHC
Gate-Emitter Thr Voltage-Max :
6V
Turn On Delay Time :
25 ns
Package / Case :
TO-220-3
Test Condition :
480V, 12A, 23 Ω, 15V
Fall Time-Max (tf) :
100ns
Switching Energy :
130µJ (on), 130µJ (off)
Operating Temperature :
-55°C~150°C TJ
Gate-Emitter Voltage-Max :
20V
Datasheets
IRG4BC30WPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4BC30WPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRG4BC30WPBF pinout, IRG4BC30WPBF datasheet PDF, IRG4BC30WPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4BC30WPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG4BC30WPBF


IRG4BC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC30WPBF                Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

 

IRG4BC30WPBF               Features

?    Short Circuit Rated Time; 10us @ TC =100 ° C, VGE = 15V

?    High Speed Switching

?    Low Saturation Voltage : VCE(sat) = 2.6 V @  IC = 50A

?    High Input Impedance

?    Fast & Soft Anti-Parallel FWD

?    UL Certified  No.E209204Application

?    AC & DC Motor Controls

?    General Purpose Inverters

?    Weldings

?    Servo Controls

? UPS

 

IRG4BC30WPBF               Applications

Air Conditioning

Motor Drives

Servo Drives


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