IRG4BC30UPBF
- Mfr.Part #
- IRG4BC30UPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- ULTRAFAST SPEED IGBT
- Stock
- 29,973
- In Stock :
- 29,973
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 23A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Height :
- 16.51mm
- Package / Case :
- TO-220-3
- Gate Charge :
- 50nC
- Voltage - Rated DC :
- 600V
- Current - Collector Pulsed (Icm) :
- 92A
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Mount :
- Through Hole
- Additional Feature :
- ULTRA FAST SWITCHING
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Input Capacitance :
- 1.1nF
- Gate-Emitter Voltage-Max :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Published :
- 2000
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Radiation Hardening :
- No
- Rise Time :
- 9.6ns
- ECCN Code :
- EAR99
- Length :
- 10.668mm
- Turn Off Time-Nom (toff) :
- 320 ns
- Termination :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Turn On Time :
- 33 ns
- Transistor Element Material :
- SILICON
- Fall Time-Max (tf) :
- 150ns
- Collector Emitter Breakdown Voltage :
- 600V
- Lead Free :
- Contains Lead, Lead Free
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 78 ns
- Number of Elements :
- 1
- Max Power Dissipation :
- 100W
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Number of Terminations :
- 3
- Width :
- 4.826mm
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 2.1V
- Case Connection :
- COLLECTOR
- Current Rating :
- 23A
- Td (on/off) @ 25°C :
- 17ns/78ns
- Switching Energy :
- 160μJ (on), 200μJ (off)
- Input Type :
- Standard
- Power Dissipation :
- 100W
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 17 ns
- Number of Pins :
- 3
- Datasheets
- IRG4BC30UPBF
IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4BC30UPBF is an insulated gate bipolar transistor. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
Features
-
Industry standard TO-220AB package
-
Lead-Free
-
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
-
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than Generation 3
-
IGBTs optimized for specified application conditions
Application
-
Motor Drive & Control
-
Alternative Energy
-
Power Management
-
Consumer Electronics
-
Maintenance & Repair
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