IRG4BC30FD-SPBF
- Mfr.Part #
- IRG4BC30FD-SPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT, 31A I(C), 600V V(BR)CES, N
- Stock
- 326,867
- In Stock :
- 326,867
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Width :
- 9.652mm
- Reverse Recovery Time :
- 42 ns
- Gate Charge :
- 51nC
- Switching Energy :
- 630μJ (on), 1.39mJ (off)
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 31A
- Case Connection :
- COLLECTOR
- Test Condition :
- 480V, 17A, 23 Ω, 15V
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 4.699mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 100W
- Collector Emitter Breakdown Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Gate-Emitter Thr Voltage-Max :
- 6V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Td (on/off) @ 25°C :
- 42ns/230ns
- Turn Off Time-Nom (toff) :
- 620 ns
- Current Rating :
- 31A
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Input Type :
- Standard
- JESD-609 Code :
- e3
- Current - Collector Pulsed (Icm) :
- 124A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- ECCN Code :
- EAR99
- Turn On Time :
- 69 ns
- Length :
- 10.668mm
- Lead Free :
- Lead Free
- Published :
- 2010
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 17A
- Power Dissipation :
- 100W
- Collector Emitter Saturation Voltage :
- 1.8V
- Rise Time :
- 27ns
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Number of Pins :
- 3
- Datasheets
- IRG4BC30FD-SPBF

IRG4BC30FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30FD-SPBF Description
IRG4BC30FD-SPBF is a 600v Fast CoPack insulated gate bipolar transistor with a hyperfast diode. The Infineon IRG4BC30FD-SPBF is manufactured by Infineon. Its category belongs to IGBT Transistors. It is applied to many fields, like Automotive Infotainment & cluster Communications equipment Wireless infrastructure Industrial Medical. And the main parameters of this part are Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, and RoHS. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IRG4BC30FD-SPBF Features
Continuous Collector Current IC @ TC = 25°C: 31A
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, > 20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
Lead-Free
IRG4BC30FD-SPBF Applications
Automotive
Infotainment & cluster
Communications equipment
Wireless infrastructure
Industrial
Medical
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