IRG4BC30FD-SPBF

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Mfr.Part #
IRG4BC30FD-SPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT, 31A I(C), 600V V(BR)CES, N
Stock
326,867
In Stock :
326,867

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Width :
9.652mm
Reverse Recovery Time :
42 ns
Gate Charge :
51nC
Switching Energy :
630μJ (on), 1.39mJ (off)
REACH SVHC :
No SVHC
Mount :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
31A
Case Connection :
COLLECTOR
Test Condition :
480V, 17A, 23 Ω, 15V
JESD-30 Code :
R-PSSO-G2
Height :
4.699mm
Transistor Element Material :
SILICON
Max Power Dissipation :
100W
Collector Emitter Breakdown Voltage :
600V
Peak Reflow Temperature (Cel) :
260
Packaging :
Tube
Gate-Emitter Thr Voltage-Max :
6V
Element Configuration :
Single
Radiation Hardening :
No
Terminal Form :
Gull wing
Td (on/off) @ 25°C :
42ns/230ns
Turn Off Time-Nom (toff) :
620 ns
Current Rating :
31A
RoHS Status :
ROHS3 Compliant
Gate-Emitter Voltage-Max :
20V
Input Type :
Standard
JESD-609 Code :
e3
Current - Collector Pulsed (Icm) :
124A
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
POWER CONTROL
ECCN Code :
EAR99
Turn On Time :
69 ns
Length :
10.668mm
Lead Free :
Lead Free
Published :
2010
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Power Dissipation :
100W
Collector Emitter Saturation Voltage :
1.8V
Rise Time :
27ns
Collector Emitter Voltage (VCEO) :
1.8V
Voltage - Rated DC :
600V
Factory Lead Time :
13 Weeks
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
2
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Pins :
3
Datasheets
IRG4BC30FD-SPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4BC30FD-SPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, IRG4BC30FD-SPBF pinout, IRG4BC30FD-SPBF datasheet PDF, IRG4BC30FD-SPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4BC30FD-SPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG4BC30FD-SPBF


IRG4BC30FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC30FD-SPBF Description


IRG4BC30FD-SPBF is a 600v Fast CoPack insulated gate bipolar transistor with a hyperfast diode. The Infineon IRG4BC30FD-SPBF is manufactured by Infineon. Its category belongs to IGBT Transistors. It is applied to many fields, like Automotive Infotainment & cluster Communications equipment Wireless infrastructure Industrial Medical. And the main parameters of this part are Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, and RoHS. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRG4BC30FD-SPBF Features


Continuous Collector Current IC @ TC = 25°C: 31A

Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, > 20kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.

Lead-Free



IRG4BC30FD-SPBF Applications


Automotive 

Infotainment & cluster 

Communications equipment 

Wireless infrastructure 

Industrial 

Medical


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