IRG4BC20FDPBF
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- Mfr.Part #
- IRG4BC20FDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 16A I(C), 600V V(BR)CES, N
- Stock
- 13,057
- In Stock ：
- 13,057
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 27nC
- Collector Emitter Breakdown Voltage :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 9A
- Package / Case :
- TO-220-3
- Power Dissipation :
- 60W
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- Width :
- 4.69mm
- Max Collector Current :
- 16A
- Collector Emitter Saturation Voltage :
- 1.66V
- Polarity :
- NPN
- Factory Lead Time :
- 16 Weeks
- Power - Max :
- 60W
- Voltage - Rated DC :
- 600V
- Reverse Recovery Time :
- 37 ns
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 250μJ (on), 640μJ (off)
- Test Condition :
- 480V, 9A, 50Ohm, 15V
- Termination :
- Through Hole
- Height :
- 8.77mm
- Td (on/off) @ 25°C :
- 43ns/240ns
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Length :
- 10.5156mm
- Published :
- 1997
- Current - Collector (Ic) (Max) :
- 16A
- Rise Time :
- 20ns
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Supplier Device Package :
- TO-220AB
- REACH SVHC :
- No SVHC
- Max Operating Temperature :
- 150°C
- Current - Collector Pulsed (Icm) :
- 64A
- Collector Emitter Voltage (VCEO) :
- 2V
- Max Power Dissipation :
- 60W
- Packaging :
- Tube
- Mount :
- Through Hole
- Lead Free :
- Contains Lead, Lead Free
- Current Rating :
- 16A
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Datasheets
- IRG4BC20FDPBF
IRG4BC20FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20FDPBF Description
IRG4BC20FDPBF is a 600v N-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The IRG4BC20FDPBF is applied to many fields, like Industrial Pro audio, video & signage Enterprise systems Enterprise machines Personal electronics, and Tablets. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC20FDPBF is in the TO-220AB package with 60W power dissipation.
IRG4BC20FDPBF Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
Lead-Free
IRG4BC20FDPBF Applications
Industrial
Pro audio, video & signage
Enterprise systems
Enterprise machine
Personal electronics
Tablets
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