IRFHS9351TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

-1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Element Configuration :

Dual

Max Power Dissipation :

1.4W

Drain Current-Max (Abs) (ID) :

5.1A

Fall Time (Typ) :

7.9 ns

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Number of Terminations :

6

Turn-Off Delay Time :

6.3 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

170m Ω @ 3.1A, 10V

Series :

HEXFET®

JESD-609 Code :

e3

Lead Free :

Lead Free

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.17Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Vgs(th) (Max) @ Id :

2.4V @ 10μA

REACH SVHC :

No SVHC

Threshold Voltage :

-1.8V

Package / Case :

6-VQFN Exposed Pad

Continuous Drain Current (ID) :

2.3A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 10V

Additional Feature :

High Reliability

Number of Pins :

6

Drain to Source Breakdown Voltage :

-30V

Transistor Element Material :

SILICON

Power Dissipation :

1.4W

Published :

2011

ECCN Code :

EAR99

Base Part Number :

IRFHS9351PBF

RoHS Status :

ROHS3 Compliant

Rise Time :

30ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8.3 ns