IRFHS9351TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

170m Ω @ 3.1A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

6

Published :

2011

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Turn-Off Delay Time :

6.3 ns

Transistor Element Material :

SILICON

Rise Time :

30ns

Continuous Drain Current (ID) :

2.3A

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

-1.8 V

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.17Ohm

Transistor Application :

SWITCHING

Turn On Delay Time :

8.3 ns

Max Power Dissipation :

1.4W

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

7.9 ns

Package / Case :

6-VQFN Exposed Pad

Mount :

Surface Mount

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-30V

Power Dissipation :

1.4W

Additional Feature :

High Reliability

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

REACH SVHC :

No SVHC

Base Part Number :

IRFHS9351PBF

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Threshold Voltage :

-1.8V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 10V

Drain Current-Max (Abs) (ID) :

5.1A

FET Type :

2 P-Channel (Dual)