IRFHS9351TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

High Reliability

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.17Ohm

FET Feature :

Logic Level Gate

Turn On Delay Time :

8.3 ns

Nominal Vgs :

-1.8 V

Transistor Application :

SWITCHING

Number of Pins :

6

ECCN Code :

EAR99

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

2.3A

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

170m Ω @ 3.1A, 10V

Rise Time :

30ns

Turn-Off Delay Time :

6.3 ns

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 10V

Fall Time (Typ) :

7.9 ns

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-1.8V

Power Dissipation :

1.4W

Series :

HEXFET®

Published :

2011

Base Part Number :

IRFHS9351PBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.4W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Package / Case :

6-VQFN Exposed Pad

Factory Lead Time :

12 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

5.1A