IRFH3707TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Ta 29A Tc

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.8W Ta

Packaging :

Tape and Reel (TR)

Number of Elements :

1

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

9.7 ns

Resistance :

12.4mOhm

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

96A

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 12A, 10V

Height :

950μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

12 Weeks

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

JESD-30 Code :

S-PDSO-N3

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 15V

Nominal Vgs :

1.8 V

Avalanche Energy Rating (Eas) :

13 mJ

Threshold Voltage :

1.8V

Mount :

Surface Mount

Vgs (Max) :

±20V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

12A

Number of Pins :

8

Transistor Application :

SWITCHING

Length :

3mm

Turn On Delay Time :

7.8 ns

Terminal Position :

Dual

Turn-Off Delay Time :

8.7 ns

ECCN Code :

EAR99

Rise Time :

10.2ns

Number of Terminations :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

12mA

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Width :

3mm

Package / Case :

8-PowerVDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Power Dissipation :

2.8W

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel