IRFH4210DTRPBF
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- Mfr.Part #
- IRFH4210DTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 44A PQFN
- Stock
- 10,665
- In Stock ：
- 10,665
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 45ns
- Package / Case :
- 8-PowerTDFN
- Height :
- 900μm
- ECCN Code :
- EAR99
- Packaging :
- Digi-Reel®
- Length :
- 6mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 24 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 16 ns
- Turn On Delay Time :
- 19 ns
- Power Dissipation :
- 3.5W
- Power Dissipation-Max :
- 3.5W Ta 125W Tc
- Published :
- 2013
- Number of Pins :
- 5
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 44A
- Width :
- 5mm
- Drain to Source Voltage (Vdss) :
- 25V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 4812pF @ 13V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.6V
- Resistance :
- 1.1MOhm
- Current - Continuous Drain (Id) @ 25°C :
- 44A Ta
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 50A, 10V
- Datasheets
- IRFH4210DTRPBF
N-Channel Digi-Reel® 1.1m Ω @ 50A, 10V ±20V 4812pF @ 13V 77nC @ 10V 25V 8-PowerTDFN
IRFH4210DTRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4812pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 24 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.6V threshold voltage. Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRFH4210DTRPBF Features
a continuous drain current (ID) of 44A
the turn-off delay time is 24 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFH4210DTRPBF Applications
There are a lot of Infineon Technologies
IRFH4210DTRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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