IRFH4201TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

49A Ta

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

19 ns

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

478 mJ

Contact Plating :

Copper, Silver, Tin

Radiation Hardening :

No

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.1V @ 150μA

Rise Time :

43ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 13V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.5W Ta 156W Tc

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 50A, 10V

Terminal Position :

Dual

Power Dissipation :

3.5W

Lead Free :

Lead Free

Height :

900μm

Transistor Application :

SWITCHING

Series :

HEXFET®

Package / Case :

8-PowerVDFN

Turn On Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

25V

Length :

6mm

Published :

2013

Mount :

Surface Mount

Mounting Type :

Surface Mount

Width :

5mm

Number of Pins :

5

Number of Elements :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

24 ns

Threshold Voltage :

1.6V

Continuous Drain Current (ID) :

49A