IRFH3702TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN

Max Operating Temperature :

150°C

Radiation Hardening :

No

Rise Time :

15ns

Input Capacitance :

1.51nF

Number of Elements :

1

Rds On Max :

7.1 mΩ

REACH SVHC :

No SVHC

Turn On Delay Time :

9.6 ns

Continuous Drain Current (ID) :

16A

Height :

939.8μm

Rds On (Max) @ Id, Vgs :

7.1mOhm @ 16A, 10V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 42A Tc

Width :

2.9972mm

Fall Time (Typ) :

5.8 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Length :

2.9972mm

Mounting Type :

Surface Mount

Supplier Device Package :

8-PQFN (3x3)

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Number of Pins :

8

Power Dissipation :

2.8W

Published :

2010

Turn-Off Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 15V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Resistance :

7.1mOhm

Max Power Dissipation :

2.8W

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Recovery Time :

26 ns

Series :

HEXFET®

Drain to Source Resistance :

7.1mOhm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V