IRFH4210TRPBF
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- Mfr.Part #
- IRFH4210TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 45A PQFN
- Stock
- 3,674
- In Stock ：
- 3,674
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 10V
- Radiation Hardening :
- No
- Power Dissipation :
- 3.6W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4812pF @ 13V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 5
- Threshold Voltage :
- 1.6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN
- RoHS Status :
- RoHS Compliant
- Height :
- 900μm
- Resistance :
- 1.1MOhm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Length :
- 6mm
- Rise Time :
- 44ns
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 24 ns
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Continuous Drain Current (ID) :
- 45A
- Power Dissipation-Max :
- 3.6W Ta 104W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 20 ns
- Published :
- 2015
- Fall Time (Typ) :
- 15 ns
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 50A, 10V
- Series :
- HEXFET®
- Drain to Source Voltage (Vdss) :
- 25V
- Width :
- 5mm
- Lead Free :
- Lead Free
- Datasheets
- IRFH4210TRPBF
N-Channel Tape & Reel (TR) 1.35m Ω @ 50A, 10V ±20V 4812pF @ 13V 74nC @ 10V 25V 8-PowerTDFN
IRFH4210TRPBF Overview
A device's maximum input capacitance is 4812pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 45A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRFH4210TRPBF Features
a continuous drain current (ID) of 45A
the turn-off delay time is 24 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFH4210TRPBF Applications
There are a lot of Infineon Technologies
IRFH4210TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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