IRFH4210TRPBF
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- Mfr.Part #
- IRFH4210TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 45A PQFN
- Stock
- 3,674
- In Stock ：
- 3,674
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 900μm
- Mounting Type :
- Surface Mount
- Width :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 50A, 10V
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1.6V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Resistance :
- 1.1MOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 6mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 3.6W Ta 104W Tc
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 44ns
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 10V
- Turn On Delay Time :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 25V
- Power Dissipation :
- 3.6W
- Number of Pins :
- 5
- Published :
- 2015
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 24 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 45A
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4812pF @ 13V
- Fall Time (Typ) :
- 15 ns
- Package / Case :
- 8-PowerTDFN
- Datasheets
- IRFH4210TRPBF
N-Channel Tape & Reel (TR) 1.35m Ω @ 50A, 10V ±20V 4812pF @ 13V 74nC @ 10V 25V 8-PowerTDFN
IRFH4210TRPBF Overview
A device's maximum input capacitance is 4812pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 45A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRFH4210TRPBF Features
a continuous drain current (ID) of 45A
the turn-off delay time is 24 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFH4210TRPBF Applications
There are a lot of Infineon Technologies
IRFH4210TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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