IRFH3707TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

FET Type :

N-Channel

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

12.4mOhm @ 12A, 10V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Height :

939.8μm

Current - Continuous Drain (Id) @ 25°C :

12A Ta 29A Tc

Input Capacitance :

755pF

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Published :

2010

Drain to Source Resistance :

12.4mOhm

Supplier Device Package :

8-PQFN (3x3)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Mount :

Surface Mount

Nominal Vgs :

1.8 V

Element Configuration :

Single

Recovery Time :

30 ns

Turn-Off Delay Time :

9.9 ns

Resistance :

12.4mOhm

Rds On Max :

12.4 mΩ

Package / Case :

8-PowerVDFN

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.8 ns

Rise Time :

11ns

Power Dissipation :

2.8W

Number of Pins :

8

Fall Time (Typ) :

5.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

2.9972mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

2.8W Ta

Length :

2.9972mm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.8V

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V