IRFHM8342TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

7.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Number of Elements :

1

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

16m Ω @ 17A, 10V

JESD-30 Code :

S-PDSO-F5

Number of Channels :

1

Rise Time :

30ns

Transistor Application :

SWITCHING

Terminal Position :

Dual

Resistance :

13mOhm

Turn On Delay Time :

8.1 ns

Power Dissipation-Max :

2.6W Ta 20W Tc

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

1.8V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Number of Pins :

8

Vgs (Max) :

±20V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Radiation Hardening :

No

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.35V @ 25µA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

10A

Fall Time (Typ) :

5.6 ns

Published :

2013

Number of Terminations :

5

Drain Current-Max (Abs) (ID) :

20A

Mounting Type :

Surface Mount