IRFHM8330TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Terminal Position :

Dual

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.7W Ta 33W Tc

Avalanche Energy Rating (Eas) :

42 mJ

Case Connection :

DRAIN

Turn On Delay Time :

9.2 ns

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Turn-Off Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

S-PDSO-F5

Drain-source On Resistance-Max :

0.0066Ohm

Number of Terminations :

5

Continuous Drain Current (ID) :

16A

REACH SVHC :

No SVHC

Threshold Voltage :

1.8V

Power Dissipation :

2.7W

Rise Time :

15ns

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 20A, 10V

Fall Time (Typ) :

5.7 ns

Mounting Type :

Surface Mount

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Number of Channels :

1

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

55A

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V