IRFHM792TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

2

Fall Time (Typ) :

2.6 ns

Rds On (Max) @ Id, Vgs :

195m Ω @ 2.9A, 10V

Base Part Number :

IRFHM792PBF

Pulsed Drain Current-Max (IDM) :

14A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

5.2 ns

JESD-609 Code :

e3

Power Dissipation :

2.3W

Element Configuration :

Dual

Continuous Drain Current (ID) :

2.3A

Input Capacitance (Ciss) (Max) @ Vds :

251pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerVDFN

Case Connection :

DRAIN

Max Power Dissipation :

2.3W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 10μA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Turn On Delay Time :

3.4 ns

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

3.4A

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Published :

2013

Number of Pins :

8

Drain-source On Resistance-Max :

0.195Ohm

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Rise Time :

4.7ns