IRFH4213DTRPBF
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- Mfr.Part #
- IRFH4213DTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A PQFN
- Stock
- 37,079
- In Stock ：
- 37,079
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 50A, 10V
- Length :
- 6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 18 ns
- Number of Pins :
- 5
- Height :
- 900μm
- Package / Case :
- 8-PowerTDFN
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Rise Time :
- 30ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3520pF @ 13V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3.6W
- Width :
- 5mm
- Drain to Source Voltage (Vdss) :
- 25V
- Published :
- 2013
- Power Dissipation-Max :
- 3.6W Ta 96W Tc
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Turn On Delay Time :
- 14 ns
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Fall Time (Typ) :
- 12 ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 40A
- Resistance :
- 1.35mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 1.6V
- Datasheets
- IRFH4213DTRPBF
N-Channel Tape & Reel (TR) 1.35m Ω @ 50A, 10V ±20V 3520pF @ 13V 55nC @ 10V 25V 8-PowerTDFN
IRFH4213DTRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3520pF @ 13V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.6V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRFH4213DTRPBF Features
a continuous drain current (ID) of 40A
the turn-off delay time is 18 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFH4213DTRPBF Applications
There are a lot of Infineon Technologies
IRFH4213DTRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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