IRFH3702TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9.6 ns

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.8 V

Factory Lead Time :

12 Weeks

Height :

939.8μm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

1

Turn-Off Delay Time :

11 ns

Dual Supply Voltage :

30V

Fall Time (Typ) :

5.8 ns

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 16A, 10V

Threshold Voltage :

1.8V

Number of Terminations :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 15V

Pulsed Drain Current-Max (IDM) :

120A

JESD-30 Code :

S-PDSO-N3

Current - Continuous Drain (Id) @ 25°C :

16A Ta 42A Tc

Terminal Position :

Dual

Power Dissipation-Max :

2.8W Ta

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Length :

2.9972mm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Published :

2009

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

77 mJ

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.0071Ohm

Continuous Drain Current (ID) :

16A

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Mounting Type :

Surface Mount

Rise Time :

15ns

Transistor Element Material :

SILICON

Termination :

SMD/SMT

Power Dissipation :

2.8W

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

2.9972mm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Series :

HEXFET®