IRFH4201TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5mm

Continuous Drain Current (ID) :

49A

Transistor Element Material :

SILICON

Turn-Off Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

19 ns

Contact Plating :

Copper, Silver, Tin

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.5W

Terminal Position :

Dual

Length :

6mm

Turn On Delay Time :

20 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 50A, 10V

Rise Time :

43ns

Current - Continuous Drain (Id) @ 25°C :

49A Ta

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 13V

Series :

HEXFET®

Package / Case :

8-PowerVDFN

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

478 mJ

Published :

2013

Threshold Voltage :

1.6V

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.1V @ 150μA

Power Dissipation-Max :

3.5W Ta 156W Tc

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

900μm

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

25V

Vgs (Max) :

±20V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Number of Pins :

5