IRFH4251DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Threshold Voltage :

1.6V

Vgs(th) (Max) @ Id :

2.1V @ 35µA

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

64A 188A

Power - Max :

31W 63W

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

SOURCE

Width :

5mm

Mount :

Surface Mount

REACH SVHC :

No SVHC

Max Power Dissipation :

63W

Avalanche Energy Rating (Eas) :

61 mJ

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

FET Type :

2 N-Channel (Dual), Schottky

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

25V

Series :

FASTIRFET™

Radiation Hardening :

No

Element Configuration :

Dual

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1314pF @ 13V

Drain Current-Max (Abs) (ID) :

45A

Drain-source On Resistance-Max :

0.0046Ohm

Continuous Drain Current (ID) :

188A

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Height :

900μm

Length :

6mm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR