IRFH4210DTRPBF
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- Mfr.Part #
- IRFH4210DTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 44A PQFN
- Stock
- 10,665
- In Stock ：
- 10,665
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 16 ns
- Continuous Drain Current (ID) :
- 44A
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 44A Ta
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 25V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Height :
- 900μm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Resistance :
- 1.1MOhm
- Length :
- 6mm
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4812pF @ 13V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Threshold Voltage :
- 1.6V
- Packaging :
- Digi-Reel®
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 3.5W Ta 125W Tc
- Number of Pins :
- 5
- Series :
- HEXFET®
- Power Dissipation :
- 3.5W
- Rise Time :
- 45ns
- Turn-Off Delay Time :
- 24 ns
- Number of Elements :
- 1
- Width :
- 5mm
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 50A, 10V
- Element Configuration :
- Single
- Package / Case :
- 8-PowerTDFN
- Mount :
- Surface Mount
- Datasheets
- IRFH4210DTRPBF
N-Channel Digi-Reel® 1.1m Ω @ 50A, 10V ±20V 4812pF @ 13V 77nC @ 10V 25V 8-PowerTDFN
IRFH4210DTRPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4812pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 24 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.6V threshold voltage. Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRFH4210DTRPBF Features
a continuous drain current (ID) of 44A
the turn-off delay time is 24 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFH4210DTRPBF Applications
There are a lot of Infineon Technologies
IRFH4210DTRPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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