IRFHM792TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 10μA

Nominal Vgs :

3 V

Power - Max :

2.3W

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

2.3A

Series :

HEXFET®

Packaging :

Cut Tape (CT)

Number of Pins :

8

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

5.2 ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Published :

2011

Recovery Time :

23 ns

Continuous Drain Current (ID) :

2.3A

Rds On (Max) @ Id, Vgs :

195mOhm @ 2.9A, 10V

Max Operating Temperature :

150°C

Rds On Max :

195 mΩ

Mount :

Surface Mount

Rise Time :

4.7ns

Input Capacitance (Ciss) (Max) @ Vds :

251pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.3W

Element Configuration :

Dual

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

251pF

FET Feature :

Standard

Package / Case :

8-PowerVDFN

Drain to Source Resistance :

195mOhm

Max Power Dissipation :

2.3W

Supplier Device Package :

8-PQFN (3.3x3.3), Power33

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

2.6 ns

Mounting Type :

Surface Mount

Base Part Number :

IRFHM792PBF