IRFH8337TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

4.1 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 16.2A, 10V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Number of Terminations :

5

Power Dissipation-Max :

3.2W Ta 27W Tc

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Additional Feature :

High Reliability

Case Connection :

DRAIN

Nominal Vgs :

1.8 V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12A Ta 35A Tc

Pulsed Drain Current-Max (IDM) :

65A

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Power Dissipation :

3.2W

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Published :

2011

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Terminal Position :

Dual

Number of Pins :

8

Rise Time :

12ns

Transistor Application :

SWITCHING

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

5.7 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Continuous Drain Current (ID) :

12A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

6.4 ns

Lead Free :

Lead Free