IRFH7911TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 15V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Min Operating Temperature :

-55°C

Max Power Dissipation :

3.4W

Length :

5.9944mm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Power - Max :

2.4W 3.4W

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

8.6mOhm @ 12A, 10V

Max Operating Temperature :

150°C

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A 28A

Published :

2012

Fall Time (Typ) :

14 ns

Number of Elements :

2

REACH SVHC :

No SVHC

Threshold Voltage :

2.35V

Recovery Time :

20 ns

Drain to Source Breakdown Voltage :

30V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Package / Case :

18-PowerVQFN

RoHS Status :

RoHS Compliant

Power Dissipation :

3.4W

Number of Pins :

18

Drain to Source Resistance :

3mOhm

Base Part Number :

IRFH7911PBF

Packaging :

Cut Tape (CT)

Series :

HEXFET®

Element Configuration :

Dual

Turn-Off Delay Time :

28 ns

Height :

939.8μm

Width :

5mm

Rise Time :

35ns

Continuous Drain Current (ID) :

28A

Mounting Type :

Surface Mount

Input Capacitance :

1.06nF

Radiation Hardening :

No

Rds On Max :

8.6 mΩ

Nominal Vgs :

2.35 V

Supplier Device Package :

PQFN (5x6)