IRFH7194TRPBF
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- Mfr.Part #
- IRFH7194TRPBF
- Manufacturer
- International Rectifier
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- HEXFET POWER MOSFET
- Stock
- 31,216
- In Stock ：
- 31,216
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 35A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 11A
- Power Dissipation-Max :
- 3.6W Ta 39W Tc
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 16.4m Ω @ 21A, 10V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 140A
- Package / Case :
- 8-PowerTDFN
- JESD-30 Code :
- R-PDSO-N5
- Resistance :
- 17mOhm
- Avalanche Energy Rating (Eas) :
- 220 mJ
- DS Breakdown Voltage-Min :
- 100V
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 733pF @ 50V
- Vgs(th) (Max) @ Id :
- 3.6V @ 50μA
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Published :
- 2013
- Series :
- FASTIRFET™, HEXFET®
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 35A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFH7194TRPBF
N-Channel Tape & Reel (TR) 16.4m Ω @ 21A, 10V ±20V 733pF @ 50V 19nC @ 10V 100V 8-PowerTDFN
IRFH7194TRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 220 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 733pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.A device can conduct a maximum continuous current of [11A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 140A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFH7194TRPBF Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 35A
based on its rated peak drain current 140A.
a 100V drain to source voltage (Vdss)
IRFH7194TRPBF Applications
There are a lot of Infineon Technologies
IRFH7194TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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