IRFH5255TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 51A Tc

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Turn On Delay Time :

7.9 ns

Number of Pins :

8

Resistance :

6mOhm

Continuous Drain Current (ID) :

51A

Turn-Off Delay Time :

6.5 ns

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

3.8 ns

Input Capacitance (Ciss) (Max) @ Vds :

988pF @ 13V

Package / Case :

8-PowerVDFN

Width :

5mm

Avalanche Energy Rating (Eas) :

53 mJ

Case Connection :

DRAIN

Power Dissipation-Max :

3.6W Ta 26W Tc

Drain to Source Breakdown Voltage :

25V

Series :

HEXFET®

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-N5

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Power Dissipation :

3.6W

Rise Time :

10.7ns

Rds On (Max) @ Id, Vgs :

6m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Length :

5.9944mm

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Published :

2010

Height :

838.2μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Pulsed Drain Current-Max (IDM) :

60A