IRFH5007TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

ECCN Code :

EAR99

Fall Time (Typ) :

11 ns

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

4290pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.15mm

Continuous Drain Current (ID) :

100A

JESD-609 Code :

e3

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.6W Ta 156W Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 150μA

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

17A Ta 100A Tc

Mount :

Surface Mount

Height :

990.6μm

REACH SVHC :

No SVHC

Length :

6.1468mm

Factory Lead Time :

12 Weeks

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 50A, 10V

Drain to Source Breakdown Voltage :

75V

Number of Pins :

8

Terminal Position :

Dual

Turn-Off Delay Time :

30 ns

Case Connection :

DRAIN

Power Dissipation :

3.6W

Nominal Vgs :

2 V

Resistance :

5.9mOhm

Number of Terminations :

5

Turn On Delay Time :

10 ns

Published :

2011

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-N5

Pulsed Drain Current-Max (IDM) :

400A