IRFH5007TR2PBF
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- Mfr.Part #
- IRFH5007TR2PBF
- Manufacturer
- International Rectifier
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 17A/100A 8PQFN
- Stock
- 39,133
- In Stock ：
- 39,133
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4290pF @ 25V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 75V
- Published :
- 2010
- Supplier Device Package :
- 8-PQFN (5x6)
- Turn On Delay Time :
- 10 ns
- Threshold Voltage :
- 4V
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Resistance :
- 5.9mOhm
- Drain to Source Resistance :
- 5.9mOhm
- FET Type :
- N-Channel
- Power Dissipation :
- 3.6W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 4 V
- Height :
- 990.6μm
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Rise Time :
- 14ns
- Rds On (Max) @ Id, Vgs :
- 5.9mOhm @ 50A, 10V
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 75V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 8
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 30 ns
- Width :
- 5.15mm
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- Package / Case :
- 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Continuous Drain Current (ID) :
- 100A
- Input Capacitance :
- 4.29nF
- Element Configuration :
- Single
- Recovery Time :
- 47 ns
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 100A Tc
- Max Power Dissipation :
- 3.6W
- Length :
- 6.1468mm
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 5.9 mΩ
- Fall Time (Typ) :
- 11 ns
- Datasheets
- IRFH5007TR2PBF
N-Channel Cut Tape (CT) 5.9mOhm @ 50A, 10V 4290pF @ 25V 98nC @ 10V 75V 8-PowerTDFN
IRFH5007TR2PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4290pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 5.9mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 75V is required between drain and source (Vdss).
IRFH5007TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 5.9mOhm
a threshold voltage of 4V
a 75V drain to source voltage (Vdss)
IRFH5007TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5007TR2PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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