IRF9395MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

3241pF @ 15V

Packaging :

Tape and Reel (TR)

Rise Time :

142ns

Transistor Application :

SWITCHING

JESD-30 Code :

R-XBCC-N6

Power Dissipation :

2.1W

Turn-Off Delay Time :

76 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Package / Case :

DirectFET™ Isometric MC

Mount :

Surface Mount

Number of Terminations :

6

Series :

HEXFET®

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Mounting Type :

Surface Mount

Fall Time (Typ) :

121 ns

Transistor Element Material :

SILICON

Max Power Dissipation :

2.1W

Terminal Finish :

Matte Tin (Sn)

Published :

2007

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Number of Pins :

10

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

7m Ω @ 14A, 10V

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Continuous Drain Current (ID) :

14A

Drain-source On Resistance-Max :

0.007Ohm

Drain to Source Breakdown Voltage :

-30V

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

19 ns