IRF9362TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Resistance :

21mOhm

Element Configuration :

Dual

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

-8A

Transistor Element Material :

SILICON

Power Dissipation :

2W

Max Power Dissipation :

2W

Terminal Finish :

Matte Tin (Sn)

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Turn-Off Delay Time :

115 ns

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Avalanche Energy Rating (Eas) :

94 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

64A

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Lead Free :

Lead Free

Terminal Form :

Gull wing

Published :

2007

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

REACH SVHC :

No SVHC

Number of Pins :

8

Threshold Voltage :

-1.8V

Turn On Delay Time :

5.2 ns

Base Part Number :

IRF9362PBF

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Fall Time (Typ) :

53 ns

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Width :

3.9878mm

Rise Time :

5.9ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Nominal Vgs :

-1.8 V

Drain Current-Max (Abs) (ID) :

8A

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Length :

4.9784mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V